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| FP7G50US60 Transfer Molded Type IGBT Module July 2008 FP7G50US60 Transfer Molded Type IGBT Module General Description Fairchild's New IGBT Modules ( Transfer Molded Type ) provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as Motor control, Uninterrupted Power Supplies (UPS) and general Inverters where short circuit ruggedness is a required feature. Power-SPMTM tm Features * Short Circuit rated 10us @Tc=100C, Vge=15V * High Speed Switching * Low Saturation Voltage : Vce(sat) =2.2V @Ic=50A * High Input Impedance * Fast & Soft Anti-Parallel FWD Package Code : EPM7 1 Application * Welders * AC & DC Motor Controls * General Purpose Inverters * Robotics * Servo Controls * UPS 3 2 4 5 6 7 Internal Circuit Diagram Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg Viso Mounting Torque Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Isolation Voltage Power Terminals Screw : M5 Mounting Screw : M5 Rating 600 20 50 100 50 100 10 250 -40 to +125 -40 to +125 2500 2.0 2.0 Units V V A A A A us W C C V N.m N.m @ TC = 25C @ TC = 100C @ TC = 100C @ TC = 25C @ AC 1minute (c)2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FP7G50US60 Rev. A FP7G50US60 Transfer Molded Type IGBT Module Pin Configuration and Pin Description Top View 1 3 2 4 5 6 7 Internal Circuit Diagram Pin Description Pin Number 1 2 3 4 5 6 7 Pin Description Emitter of Q1, IGBT, Collector of Q2, IGBT Emitter of Q2, IGBT Collector of Q1, IGBT Gate of Q1, IGBT Emitter of Q1, IGBT Gate of Q2, IGBT Emitter of Q2, IGBT FP7G50US60 Rev. A 2 www.fairchildsemi.com FP7G50US60 Transfer Molded Type IGBT Module Electrical Characteristics (TJ = 25C, Symbol Off Characteristics BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Unless Otherwise Specified) Parameter Conditions Min Typ Max Units VGE= 0V, IC = 250A 600 - 0.6 - 250 100 V V uA nA Temperature Coeff. of Breakdown Voltage VGE= 0V, IC = 1mA Collector Cut-off Current Gate-Emitter Leakage Current VCE= VCES, VGE= 0V VGE= VGES, VCE= 0V On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage VGE = 0V, IC=50mA IC = 50A, VGE = 15V 5.0 6.0 2.2 8.5 2.8 V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Capacitance VCE = 30V, VGE = 0V, f = 1MHz 2920 400 75 pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Tsc Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 300 V, IC = 50A, VGE = 15V VCC = 300 V, VGE = 15V @ TC = 100C VCC = 300 V, IC = 50A, RG = 5.9, VGE = 15V Inductive Load, TC = 125C VCC = 300 V, IC = 50A, RG = 5.9, VGE = 15V Inductive Load, TC = 25C 10 58 40 107 140 0.75 0.54 1.29 53 40 106 274 1.09 1.68 2.77 136 26 76 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ us nC nC nC FP7G50US60 Rev. A 3 www.fairchildsemi.com FP7G50US60 Transfer Molded Type IGBT Module Electrical Characteristics of DIODE (TJ = 25C, Symbol VFM Unless Otherwise Specified) Parameter Diode Forward Voltage IF = 50A Conditions TC = 25C TC = 100C TC = 25C Min Typ Max Units 1.9 1.8 76 138 4 6 152 404 260 nC 5.2 A 2.8 V 100 ns trr Diode Reverse Recovery Time TC = 100C Diode Peak Reverse Recovery Current IF = 50A di / dt = 100 A/us TC = 25C TC = 100C TC = 25C Diode Reverse Recovery Charge TC = 100C Irr Qrr Thermal Characteristics Symbol RJC RJC RCS Weight Parameter Junction-to-Case (IGBT Part, per 1/2 Module) Junction-to-Case (DIODE Part, per 1/2 Module) Case-to-Sink Weight of Module (Conductive grease applied) Typ. 0.05 - Max. 0.4 1.0 90 Units C/W C/W C/W g FP7G50US60 Rev. A 4 www.fairchildsemi.com FP7G50US60 Transfer Molded Type IGBT Module Typical Performance Characteristics Fig 1. Typical Output Characteristics 140 20V 15V 12V Fig 2. Typical Saturation Voltage Characteristics 140 IC, Collector Current[A] IC, Collector Current[A] 120 100 80 60 40 20 0 0 2 4 120 100 80 60 40 20 Common Emitter VGE = 15V TC = 25 C TC = 125 C o o V GE = 10V Common Emitter o TC = 25 C 6 8 0 0.3 1 10 20 V CE , Collector-Emitter Voltage[V] VCE, Collector-Emitter Voltage[V] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level VCE, Collector-Emitter Voltage[V] 5 Com m on Em itter V G E = 15V 100A Fig 4. Load Current vs. Frequency 120 V CC = 300V Load Current : peak of square wave Load Current [A] 4 3 50A 100 80 60 40 20 Duty cycle : 50% o T C = 100 C Power Dissipation = 130W 2 1 0 0 50 100 o I C = 30A 150 0 0.1 1 10 100 1000 T C , Case Tem perature[ C] Frequency [Khz] Fig 5. Saturation Voltage vs. VGE VCE, Collector-Emitter Voltage[V] Fig 6. Saturation Voltage vs. VGE VCE, Collector-Emitter Voltage[V] 20 16 12 8 4 IC = 30A 100A 50A 20 16 12 8 100A Common Emitter o TC = 25 C Common Emitter o TC = 25 C 4 IC = 30A 50A 0 0 4 8 12 16 20 0 0 4 8 12 16 20 VGE, Gate-Emitter Voltage[V] VGE, Gate-Emitter Voltage[V] FP7G50US60 Rev. A 5 www.fairchildsemi.com FP7G50US60 Transfer Molded Type IGBT Module Fig 7. Capacitance Characteristics 6000 Capacitance[pF] Fig 8. Turn-On Characteristics vs. Gate Resistance 1000 Switching Time[ns] Common Emitter VCC = 300V, VGE = +/- 15V IC = 50A TC = 25 C TC = 125 C o o Common Emitter VGE = 0V, f = 1MHz T C = 25 C Cies Coes o 4000 Ton 100 Tr 2000 Cres 0 0.5 10 1 10 30 1 VCE, Collector-Emitter Voltage[V] 10 RG, Gate Resistance[] Fig 9. Turn-Off Characteristics vs. Gate Resistance 3000 Switching Time[ns] Common Emitter VCC = 300V, VGE = +/- 15V IC = 50A T C = 25 C T C = 125 C o o Fig 10. Switching Loss vs. Gate Resistance 100 Switching Loss[mJ] Common Emitter VCC = 300V, VGE = +/- 15V IC = 50A 1000 Toff 10 TC = 25 C TC = 125 C o o Tf 1 Eon Eoff 100 Tf 30 1 10 RG, Gate Resistance[] 50 0.1 1 10 RG, Gate Resistance[] Fig 11. Turn-On Characteristics vs. Collector Current 1000 Common Emitter VCC = 300V, VGE = +/- 15V IC = 50A Fig 12. Turn-Off Characteristics vs. Collector Current 10000 Common Emitter VCC = 300V, VGE = +/- 15V IC = 50A Switching Time[ns] TC = 25 C TC = 125 C o Switching Time[ns] o Ton 1000 TC = 25 C TC = 125 C Toff o o 100 Tr 100 Tf 10 20 40 60 80 IC, Collector Current[A] 100 10 20 40 60 80 IC, Collector Current[A] 100 FP7G50US60 Rev. A 6 www.fairchildsemi.com FP7G50US60 Transfer Molded Type IGBT Module Fig 13. Switching Loss vs. Collector VGE, Gate-Emitter Voltage[V] Common Emitter VCC = 300V, VGE = +/- 15V IC = 50A TC = 25 C TC = 125 C o o Fig 14. Gate Charge Characteristics 15 10000 Switching Loss[uJ] 300 V 12 200 V Eoff 9 6 3 0 0 V CC = 100 V 1000 Eon 100 20 40 60 80 IC, Collector Current[A] 100 Common Emitter R L = 5.9 T C = 25 C o 100 Q g, Gate Charge[nC] 200 Fig 15. SOA Characteristics 300 IC, Collector Current[A] IC MAX. (Continuous) 100us 1ms 50us Fig 16. Turn-Off SOA Characteristics 10 DC Operation IC, Collector Current[A] 100 IC MAX. (Pulsed) 100 10 1 Single Nonrepetitive o Pulse TC = 25 C Curves must be derated linerarly with increase in temperature 0.1 0.3 1 10 100 1000 1 1 10 Safe Operating Area o VGE = 20V, TC = 100 C 100 1000 VCE, Collector-Emitter Voltage[V] VCE, Collector-Emitter Voltage[V] Fig 17. RBSOA Characteristics Thermal Response, Zthjc[ C/W] Fig 18. Transient Thermal Impedance 1 300 IC, Collector Current[A] o Single Nonrepetitive o Pulse TJ = 125 C VGE = 15V RG = 5.9 100 10 0.1 1 0.01 TC = 25 C IGBT : DIODE : o 0.1 0 100 200 300 400 500 600 700 VCE, Collector-Emitter Voltage[V] 1E-3 -5 10 10 10 10 10 10 10 Rectangular Pulse Duration[sec] -4 -3 -2 -1 0 1 FP7G50US60 Rev. A 7 www.fairchildsemi.com FP7G50US60 Transfer Molded Type IGBT Module Fig 19. Forward Characteristics 160 IF, Forward Current[A] Common Cathode VGE = 0V TC = 25 C TC = 125 C o o Fig 20. Reverse Recovery Characteristics Irr, Peak Reverse Recovery Current[A] Trr, Reverse Recovery Time[x10ns] 30 Trr 120 10 Trr Irr Irr Common Cathode di/dt = 100A/us o TC = 25 C TC = 100 C o 80 40 0 0 1 2 3 4 VF, Forward Voltage[V] 1 0 20 40 60 IF, Forward Current[A] FP7G50US60 Rev. A 8 www.fairchildsemi.com FP7G50US60 Transfer Molded Type IGBT Module 23.500.50 23.000.50 23.000.50 16.220.50 5.080.50 0.80+0.10 -0.05 18.400.50 14.50+0.50 -0.80 (5) 10.000.10 (R 2.7 5) 1.000.10 1 2 3 7 6 35.000.50 38.801.00 0) 1.0 (R 25.000.20 (14) 17.500.30 (14) 0 (9 ) 5 4 10.000.50 (R 80.000.30 93.000.50 1. 65 ) 9.600.10 12.200.30 (10.00) (6.50) (7 ) (10.00) (14.00) (9.00) (14.00) (9.00) (14.00) (6.50) 10.400.30 (5) FP7G50US60 Rev. A 9 12.200.30 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * tm FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PDP SPMTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world, 1mW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM (R) The Power Franchise(R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Farichild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Farichild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I35 |
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